WAFER GROWTH

Wafer Growth

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Epitaxial MOCVD wafer growth

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• GaAs: 780-1070nm

• GaAs(P): 1070-1270nm

• InP: 1275-1875nm

• Single-mode and multimode

• Three 3" wafers for easy prototyping and customization

Wafer Fabrication

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• Wet/dry etching

• Si3N4/SiO2 

• E-beam/sputtered metal

• RTP-alloy

• Ion-beam milling

• PECVD

• ICP-RIE

• RIE

Chip and Bar Processing

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• Facet passivation

• Custom facet coating

• Flip-chip bonding

• Indium/AuSn bonding

• Automated bar probe testing

Laser Packaging

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• Two Nanosystec single-mode fiber alignment stations

• Multimode fiber alignment

• Soldering and welding

• Ball and ribbon bonding

• UV epoxy lens attachment

• Hermetic sealing

• Leak, noise, environment tests

• Electro-optical characterization

• MIL-SPEC design and testing

Test and Reliability

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Our test and reliability processes are carried out in a Class 10,000 cleanroom.

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• Burn-in and reliability testing

• Multichannel chip-on-submount testing

• ILX 2-pin, 7-pin, 14-pin fiber-coupled package test

• 1000/5000hr SM/MM wafer qualification

• 50°C, 20% over Iop standard test conditions

• Pre- and post-burn-in L-I-V characterization